DYNAMIC PIEZORESISTIVITY AND BARRIER HEIGHT MODULATION IN SCHOTTKY STRUCTURES BASED ON COMPENSATED SILICON UNDER PULSED HYDROSTATIC PRESSURE

Abstract

This study presents a theoretical analysis of the dynamic piezoresistive response in Au/n-Si Schottky barrier structures fabricated on deep-level impurity compensated silicon (Si<Ni>, Si<Gd>, Si<Au>, Si<Mn>). The work focuses on elucidating the mechanisms underlying the significant enhancement of pressure sensitivity under pulsed loading compared to static conditions. By constructing a comprehensive theoretical model, we analyze the coupled effects of pressure and induced temperature changes on the electronic properties of the semiconductor bulk and the metal-semiconductor interface. The model quantitatively describes the modulation of the Schottky barrier height due to pressure-induced changes in the semiconductor electron affinity and band gap, alongside the baric and thermal shifts of deep impurity levels in the bulk. It is shown that the dynamic sensitivity arises from the synergistic effect of three primary factors: the baric shift of deep levels (ΔE_i), the pressure-induced change in the barrier height (γP), and the change in base region resistivity (ρ).