R. Khamidov, J. Nematullaev. PRESSURE-INDUCED IONIZATION OF NICKEL DEEP LEVELS IN COMPENSATED SILICON UNDER HYDROSTATIC PRESSURE: A STATIC REGIME STUDY. journal. 2025;92(1):3-7. Accessed January 21, 2026. https://journalss.org/index.php/new/article/view/13600