R. KHAMIDOV; J. NEMATULLAEV. PRESSURE-INDUCED IONIZATION OF NICKEL DEEP LEVELS IN COMPENSATED SILICON UNDER HYDROSTATIC PRESSURE: A STATIC REGIME STUDY. JOURNAL OF NEW CENTURY INNOVATIONS, [S. l.], v. 92, n. 1, p. 3–7, 2025. Disponível em: https://journalss.org/index.php/new/article/view/13600. Acesso em: 21 jan. 2026.