M.KH.KUCHKAROV. INTRINSIC CARRIER CONCENTRATION AND THE FUNDAMENTAL HIGH-TEMPERATURE OPERATING LIMIT OF WIDE-BANDGAP SEMICONDUCTORS . Ta’lim innovatsiyasi va integratsiyasi, [S. l.], v. 72, n. 1, p. 159–163, 2026. Disponível em: https://journalss.org/index.php/tal/article/view/35608. Acesso em: 21 jul. 2026.