YARIMO‘TKAZGICHLI MATERIALLARGA KIRISHMA ATOMLARINI KIRITISH USULLARI.
Keywords:
yarimo‘tkazgich, kirishma, legirlash, diffuziya, ion implantatsiyasi, epitaksiya, n-tip, p-tip, elektr o‘tkazuvchanlik, elektrofizik xossalarAbstract
Ushbu ishda yarimo‘tkazgichli materiallarga kirishma atomlarini kiritish usullari va ularning fizik xossalarga ta’siri o‘rganilgan. Kirishma kiritish (legirlash) yarimo‘tkazgichlarning elektr o‘tkazuvchanligini boshqarishning asosiy usuli hisoblanadi. Asosiy usullarga diffuziya, ion implantatsiyasi, epitaksiya va qotishma hosil qilish kiradi. Ushbu texnologiyalar yordamida materialda donor yoki akseptor markazlar hosil qilinadi. Natijada n-tip yoki p-tip yarimo‘tkazgichlar olinadi. Kirishma konsentratsiyasi va taqsimlanishi materialning elektrofizik xossalariga bevosita ta’sir ko‘rsatadi. Zamonaviy mikroelektronika va nanoelektronika qurilmalarini yaratishda ushbu usullar muhim ahamiyatga ega.
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